Origin of Anomalous Piezoresistive Effects in VLS Grown Si Nanowires

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Origin of Anomalous Piezoresistive Effects in VLS Grown Si Nanowires

Although the various effects of strain on silicon are subject of intensive research since the 1950s the physical background of anomalous piezoresistive effects in Si nanowires (NWs) is still under debate. Recent investigations concur in that due to the high surface-to-volume ratio extrinsic surface related effects superimpose the intrinsic piezoresistive properties of nanostructures. To clarify...

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ژورنال

عنوان ژورنال: Nano Letters

سال: 2015

ISSN: 1530-6984,1530-6992

DOI: 10.1021/nl5044743